Flexible materials trap heat in devices and make bit rotation more efficient. Uses in such cases are highly energy efficient devices that can be embedded in clothing or hammered on the surface of irregular objects, allowing them to have a small amount of automatic calculation. But a simple processor is not enough to meet the needs of low consumption - all components must also use electricity. This makes traditional RAM technology unsuitable, requiring power to maintain memory.
But now a group from Stanford has covered it up. Researchers have developed a flexible phase change memory that is faster in speed than regular RAM but does not require any force to maintain its position. While their work initially focused on achieving something flexible to operate, the principles they discovered during their work should generally apply to memory phase shift.
People have already developed flexible forms of memory, including flash RAM and electric RAM, and resistive RAM can be made of materials that can also be bent. But phase shift memory has countless benefits. Depending on the rate of cooling after heating, it works by connecting two electrodes through a material that can create an amorphous crystalline state. These two modes differ in how well electricity works and allow them to be distinguished from one another. You can heat the material by creating a large flow. Sudden closure of the flow causes it to cool in the amorphous state, while slowly slowing the flow leads to the formation of the crystalline state. When finished, the position can be read by passing a much smaller current and reading the resistance. It is also possible to store more than one bit per device by adjusting the heating to create multiple discrete resistance levels. Crucially, no current is required to maintain the bit(s) stored on one of these devices, because the crystal/amorphous difference is stable.
The problem is that resetting the device requires enough current to dissolve part of it. So the material, while the average energy consumption is low, but at very critical points. This is a challenge for devices that may operate on a single charge taken from environmental sources. Therefore, creating a phase change memory from elastic materials is not enough. You also need to match its performance with typical uses of flexible hardware.
Easily, part of the resilience process also provides a way to improve its performance. Make this flexible h2>
Many flexible electronics are made on polymer substrates rather than on solid materials like silicon. In addition to flexibility, most polymers are insulators - they do not conduct electricity or heat well. This is very important to increase the efficiency of phase change memory.
The main point of the new device is that the phase changer is surrounded by materials that do not conduct heat well. This helps you trap the heat needed to melt a part of the machine to the desired location, which means you don't need to generate a lot of heat in the first place. This in turn means that you have to spend less time resetting the device.Advertising
This device is made by perforating aluminum oxide. The hole was then filled with alternating layers of tin telluride and tin/gallium telluride, which act as phase change materials. The electrodes were passed through aluminum oxide to connect the two ends of the device and were made of a flexible polymer material.
Modeling showed that the mixture of aluminum oxide and polymer retains heat. The hole in which the phase change material is located. This indicates that the need to reset the device has decreased as the amount of aluminum oxide around the device increases. At best, the power required for the device was a hundred times less than current devices made on a silicon substrate.
If the device is not working properly, it is all useless. But the researchers showed that it could be wrapped around a metal rod eight millimeters wide and still functioned normally. Performance was the same after 200 cycles of bending and straightening, and storage stability was good up to more than 1,000 readings. Finally, multi-bit storage was demonstrated using different levels of impedance. So, in general, it looks like you're working on what you want to do with phase change memory. But the researchers note that the basic premise here - reduced energy consumption by thermally insulating materials that store the data - can also be used for ordinary solid-phase change memories. This could have useful applications beyond memory, as other teams have shown that rather than relying on repetitive computational cycles, the neural network can be trained in phase change memory. This process currently takes more power than conventional computers to do the same thing, so increasing the energy efficiency of phase change materials could make them a better option.
Science, 2021. DOI: 10.1126 / Science .abj1261 (About DOIs).
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