What to expect: Samsung announced that it has begun mass production of 14-nanometer (nm) DRAM, the smallest industry formed by ultraviolet (EUV) technology. The number of EUV layers has been increased to five to provide "the best and most advanced DRAM operations today for their DDR5 solutions".
Samsung is dramatically increasing the chip's efficiency by implementing five layers of EUV - a process that activates the industry's highest density of dynamic memory. About 20 percent of the 14nm process reduces power consumption by about 20 percent compared to previous generation DRAM chips. The company emphasized the importance of EUV technology, particularly its ability to improve pattern accuracy for greater performance and efficiency. DPR5 provides the technology needed for greater performance and capacity in areas such as artificial intelligence and next-generation servers. “We have been leading the DRAM market for three decades by pioneering major innovations in pattern technology,” said Guoyang Lee, Senior Vice President and Senior Director of Product and DRAM Technology at Samsung Electronics. “Today, Samsung is celebrating another milestone with its multilayer EUV technology, enabling intense miniaturization at 14nm – a process typical of ArF (ArF) fluoride.”
Samsung also announced its expansion plans. The 14nm DDR5 portfolio supports data center, supercomputer, and enterprise server applications. Additionally, to meet the growing data needs of global IT systems, the tech giant expects to expand its 14nm DRN chip to 24GB.
With 12th generation Intel CPUs all set to be revealed soon, the Alder Lake DDR5 leak will be good news for fans. DDR5 is expected to gain a larger market share than its predecessor by 2023, but the changes it makes may require proper cooling solutions.
Samsung launched 14nm DRV EUV DDR5 up to 7.2Gbps