https://safirsoft.com UltraRAM optimizations can finally combine RAM and storage space into one package
Why it matters: For the longest time, memory and memory work as separate parts of a computer. The developers tried to combine the advantages of RAM and NAND into one package, but with limited success. A new type of non-volatile memory called UltraRAM shows potential, but it will take some time to integrate it into a commercial product.

The combination of random access memory (RAM) and storage is not a new idea, but so far no company has succeeded in turning this concept into a successful and widely used commercial product. However, this does not mean that research on this topic has faded.

Earlier this month, researchers from the Department of Physics and Engineering at Lancaster University in the UK published an article detailing important developments in this regard. UltraRAM is closer to mass production.

UltraRAM is described as a memory technology that “combines the non-volatility of data storage, such as flash, with the speed, energy efficiency, and working durability of memory.” “Like DRAM.” If that sounds familiar, it's because Intel has already tried to bridge The gap between DRAM and flash memory using Optane, albeit with limited success. Samsung has something called Z-NAND, and Kioxia and Western Digital also want to integrate XL-FLASH into consumer and enterprise storage solutions of the future.

https://safirsoft.com <b>UltraRAM</b> optimization <b>can</b> <b>finally</b> <b>combine</b> <b>RAM</b> and <b>storage</b> <b>space</b> <b>into</b> <b>one</b> package

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The materials used to build the same UltraRAM Hybrid semiconductors used in optoelectronic devices such as LEDs are lasers. Photodiodes and phototransistors. The latest advance from the scientists behind it has been to improve its performance when made on silicon substrates compared to gallium arsenide chips, which can be 1,000 times more expensive.

This means that UltraRAM has the potential to be a cost-effective memory solution. Scientists claim that prototypes of the devices they tested can last for 1,000 years and deliver more than 10 million programming/scan cycles with "non-destructive endurance". The last number alone is enough to get the attention of tech companies, especially if it really can be as fast as traditional RAM.

Another benefit of this new technology is the quantum mechanical effect of the uses of tunneling resonance. Dark mode prevents it from changing to transparent when voltage is applied. This process is very efficient compared to the switching techniques used in RAM and flash memory, so it can lead to better mobile devices that last longer if the battery is being used.

This operation allows you to get compressed space. A high-density bit architecture, which should theoretically allow manufacturers to store more memory capacity on a single chip. Researchers at Lancaster University say they need to further improve the process of building memory cells, but it is still an interesting technology with great potential for in-memory computing, as it eliminates the need for back-and-forth data. CPU, memory and permanent storage of the device.



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