SK Hynix has begun using ultraviolet (EUV) lithography to mass-produce 10nm 4th generation LPDDR4 DR, after successfully testing it at a limited production limit of 1ynm DRAM. This means that new phones and Ultrabooks integrate faster and less expensive memory, which is also cheaper thanks to improved chip density with the new 1anm process node.
SK Hynix was the first to launch DRDR DDR5 modules for use in the company last year, which reduces power consumption and increases functionality thanks to the use of in-chip ECC capability. Consumption class units should hit the market in 2022 along with new generation Intel and AMD processors, and with some luck, the current situation of chip shortage has improved enough to keep prices at an acceptable level.
Meanwhile, the Korean company is working on improving existing DRAM products such as DDR4 and LPDDR4. Today, SK Hynix unveiled the mass production of 8GB of 1nm LPDDR4 DRAM, the new generation of 10nm process technology. The first phones and laptops with new chips are expected to hit the market later this year.
starts. Technology 1a follows three generations of 10nm dynamic memory, simply called 1x, 1y and 1z. Its main advantage is the 25% increase in the number of DRAM chips that can be produced per chip compared to a 1z processing node, which leads to better prices for end customers. At the same time, SK Hynix is optimistic about the potential of 1AM DRAM to meet the growing demand for memory products.
It should also be noted that the performance of LPDDR4 chips produced using a 1anm process node at 4266Mbps is the fastest to date and the fastest as described in the LPDDR4 standard specification. Power consumption has also been reduced by 20%, although we will have to wait and see how this translates to a better life for smartphones. SK Hynix says it will use the new 1a process node to launch DDR5 DRAM next year, so the first consumer modules to hit the market are better than current models designed for the data center. p>
SK Hynix launches 1mm DRAM mass production with EUV